Description

BPW77 Silicon NPN Phototransistor, RoHS Compliant

BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation.

Features:

• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 10°
• Base terminal connected
• Hermetically sealed package
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

Specifications:

• Voltage – Collector Emitter Breakdown (Max): 70 V
• Current – Collector (Ic) (Max): 50 mA
• Current – Dark (Id) (Max): 100 nA
• Wavelength: 850nm
• Viewing Angle: 20°
• Power – Max: 250 mW
• Mounting Type: Through Hole
• Orientation: Top View
• Operating Temperature: -40°C ~ 125°C

Applications:

• Detector in electronic control and drive circuits

Datasheet

08BPWW77NB Datasheet